View STI45N10F7_8045810.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

this is information on a product in full production. october 2013 docid024455 rev 1 1/19 std45n10f7, STI45N10F7, stp45n10f7 n-channel 100 v, 0.0145 ? typ., 45 a, stripfet? vii deepgate? power mosfets in dpak, i 2 pak and to-220 packages datasheet - production data figure 1. internal schematic diagram features ? ultra low on-resistance ? 100% avalanche tested applications ? switching applications description these devices utilize the 7 th generation of design rules of st?s proprietary stripfet? technology, with a new gate structure. the resulting power mosfet exhibits the lowest r ds(on) in all packages. 1 2 3 tab 1 2 3 tab dpak 1 3 tab to-220 i pak 2 !-v $4!" ' 3 order codes v ds r ds(on) max. (1) 1. @ v gs = 10 v i d p tot std45n10f7 100 v 0.018 45 a 60 w STI45N10F7 stp45n10f7 table 1. device summary order codes marking package packaging std45n10f7 45n10f7 dpak tape and reel STI45N10F7 i 2 pak tube stp45n10f7 to-220 www.st.com
contents std45n10f7, STI45N10F7, stp45n10f7 2/19 docid024455 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
docid024455 rev 1 3/19 std45n10f7, STI45N10F7, stp45n10f7 electrical ratings 19 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 100 v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 c 45 a i d drain current (continuous) at t c = 100 c 32 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 180 a p tot total dissipation at t c = 25 c 60 w t j operating junction temperature -55 to 175 c t stg storage temperature c table 3. thermal resistance symbol parameter value unit dpak to-220 i 2 pak r thj-case thermal resistance junction-case 2.5 2.5 c/w r thj-amb thermal resistance junction-ambient 62.5 c/w r thj-pcb (1) 1. when mounted on fr-4 board of 1inch2, 2oz cu, t < 10 sec. thermal resistance junction-pcb 31.2 c/w
electrical characteristics std45n10f7, STI45N10F7, stp45n10f7 4/19 docid024455 rev 1 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 100 - v i dss zero gate voltage drain current (v gs = 0) v ds = 100 v 10 a v ds = 100 v; t c =125 c 100 a i gss gate body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.5 4.5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 22.5 a 0.0145 0.018 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 50 v, f =1 mhz, v gs = 0 - 1640 - pf c oss output capacitance - 360 - pf c rss reverse transfer capacitance -25 - pf q g total gate charge v dd = 50 v, i d = 45 a v gs = 10 v figure 14 -25 - nc q gs gate-source charge - 5.1 - nc q gd gate-drain charge - 12.2 - nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 50 v, i d = 22.5 a, r g = 4.7 , v gs = 10 v figure 13 -15 - ns t r rise time - 17 - ns t d(off) turn-off delay time - 24 - ns t f fall time - 8 - ns
docid024455 rev 1 5/19 std45n10f7, STI45N10F7, stp45n10f7 electrical characteristics 19 table 7. source-drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 45 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 180 a v sd (2) 2. pulsed: pulse duration=300 s, duty cycle 1.5%. forward on voltage i sd = 45 a, v gs = 0 - 1.1 v t rr reverse recovery time i sd = 45 a, di/dt = 100 a/s, v dd = 80 v, t j = 150 c -53 ns q rr reverse recovery charge - 67 nc i rrm reverse recovery current - 2.5 a
electrical characteristics std45n10f7, STI45N10F7, stp45n10f7 6/19 docid024455 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance i d 10 1 0.1 0.1 1 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 100 s 1m s 10m s 0.01 tj=175c tc=25c s ingle p u l s e 100 am16107v1 s ingle p u l s e 0.05 0.02 0.01 =0.5 0.2 0.1 k 10 t p ( s ) -4 10 - 3 10 -1 10 -5 10 -2 10 -2 10 -1 10 0 am16120v1 figure 4. output characteristics figure 5. transfer characteristics i d 100 60 20 0 0 2 v d s (v) 4 (a) 6 5v 6v v g s =10v 40 8 0 8 120 140 160 7v 8 v 9v am16109v1 i d 120 8 0 40 0 0 4 v g s (v) 8 (a) 2 6 10 20 60 100 140 v d s = 8 v am16110v1 figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance v g s 6 4 2 0 0 10 q g (nc) (v) 3 0 8 15 20 10 v dd =50v 12 5 25 i d =45a am16111v1 r d s (on) 14 1 3 .5 1 3 10 i d (a) (m ) 5 15 14.5 v g s =10v 20 25 15 15.5 16 3 0 3 5 40 16.5 am16112v1
docid024455 rev 1 7/19 std45n10f7, STI45N10F7, stp45n10f7 electrical characteristics 19 figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature c 1000 100 0 0 20 v d s (v) (pf) ci ss co ss cr ss 40 60 8 0 am16114v1 v g s (th) 0. 8 0.6 0.4 0.2 -75 0 t j (c) (norm) -50 1 75 25 50 100 i d =250 a -50 125 150 1.2 am16115v1 figure 10. normalized on-resistance vs temperature figure 11. source-drain diode forward characteristics r d s (on) 2 1 0 -75 0 t j (c) (norm) -50 75 25 50 100 0.5 1.5 -25 125 i d =22.5a v g s =10 v am16116v1 v s d 5 15 i s d (a) (v) 10 3 0 20 25 0.4 0.5 0.6 0.7 t j =-55c t j =175c t j =25c 0. 8 0.9 3 5 40 1 am16117v1 figure 12. normalized v (br)ds vs temperature v -75 0 t j (c) (norm) -50 75 25 50 100 0.96 0.97 0.9 8 0.99 1 1.01 1.02 1.0 3 i d =1ma 1.04 -25 125 (br)ds am16119v1
test circuits std45n10f7, STI45N10F7, stp45n10f7 8/19 docid024455 rev 1 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
docid024455 rev 1 9/19 std45n10f7, STI45N10F7, stp45n10f7 package mechanical data 19 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data std45n10f7, STI45N10F7, stp45n10f7 10/19 docid024455 rev 1 table 8. dpak (to-252) type a mechanical data dim. mm min. typ. max. a2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b0.64 0.90 b4 5.20 5.40 c0.45 0.60 c2 0.48 0.60 d6.00 6.20 d1 5.10 e6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h 9.35 10.10 l1.00 1.50 (l1) 2.80 l2 0.80 l4 0.60 1.00 r0.20 v2 0 8
docid024455 rev 1 11/19 std45n10f7, STI45N10F7, stp45n10f7 package mechanical data 19 figure 19. dpak (to-252) type a drawing 0068772_l_type_a
package mechanical data std45n10f7, STI45N10F7, stp45n10f7 12/19 docid024455 rev 1 figure 20. dpak footprint (a) a. all dimensions are in millimeters footprint_rev_l
docid024455 rev 1 13/19 std45n10f7, STI45N10F7, stp45n10f7 package mechanical data 19 figure 21. i2pak (to-262) drawings table 9. i2pak (to-262) mechanical data dim. mm min. typ. max. a 4.40 4.60 a1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 d 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 e10 10.40 l13 14 l1 3.50 3.93 l2 1.27 1.40 0004982_rev_h
package mechanical data std45n10f7, STI45N10F7, stp45n10f7 14/19 docid024455 rev 1 table 10. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
docid024455 rev 1 15/19 std45n10f7, STI45N10F7, stp45n10f7 package mechanical data 19 figure 22. to-220 type a drawing ?type!?2ev?4
packaging mechanical data std45n10f7, STI45N10F7, stp45n10f7 16/19 docid024455 rev 1 5 packaging mechanical data table 11. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e1.65 1.85n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t0.25 0.35 w15.7 16.3
docid024455 rev 1 17/19 std45n10f7, STI45N10F7, stp45n10f7 packaging mechanical data 19 figure 23. tape figure 24. reel p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us b1 for m a chine ref. only incl u ding dr a ft a nd r a dii concentric a ro u nd b0 am0 88 52v1 top cover t a pe a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
revision history std45n10f7, STI45N10F7, stp45n10f7 18/19 docid024455 rev 1 6 revision history table 12. document revision history date revision changes 10-oct-2013 1 first release.
docid024455 rev 1 19/19 std45n10f7, STI45N10F7, stp45n10f7 19 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

▲Up To Search▲

Price & Availability of STI45N10F7

	To Download STI45N10F7 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .